In recent years, metal halide perovskites have drawn great interest for use in solar cells, light-emitting diodes, photodetectors, and transistors, thanks to their outstanding optoelectronic characteristics and low-cost production. Among emerging semiconductors, tin (Sn2+-) halide perovskites have made notable advancements in p-channel thin-film transistors (TFTs), due to their weak ion migration and exceptional hole-transport properties. The development of high-performance p-channel transistors is essential for realizing complementary electronic devices with enhanced noise immunity and lower power consumption. This work seeks to deepen insight into this emerging field and facilitate the advancement of perovskite thin-film electronics by discussing the unique physical properties of Sn2+-halide perovskites and highlighting recent progress in Sn2+-halide perovskite TFTs and their application in complementary metal-oxide-semiconductor (CMOS)-like circuits. The provision of theoretical insights and technical guidance supports the continued innovation and future application of Sn2+-halide perovskite electronic devices.
