Nano Lett. 台湾阳明交通大学
    发布时间: 2024-09-20 13:30    

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A novel antiferroelectric material, PbSnO3 (PSO), was introduced into a resistive random access memory (RRAM) to reveal its resistive switching (RS) properties. It exhibits outstanding electrical performance with a large memory window (>104), narrow switching voltage distribution (±2 V), and low power consumption.

https://doi.org/10.1021/acs.nanolett.4c02705