Resistive random-access memory (RRAM) is considered the next-generation nonvolatile memory owing to its simplicity, low power consumption, and high storage density.
Resistive switching (RS) occurs in a wide range of materials among the transition metal oxides. Herein, an epitaxial ternary metal oxide layer, LaCoOx (LCO), grown on Nb-doped SrTiO3 substrates, is utilized as an RRAM device. When voltage is applied, it exhibits excellent RS behavior.
